, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 | the rf line npn silicon rf power transistor . . . designed for 1 2.5 volt low band vhp large-signal power amplifier applications in commercial and industrial fm equipment. ? specified 12.5 v, 50 mhz characteristics ? output power = 70 w minimum gain = 1 1 db efficiency = 50% ? load mismatch capability at high line and rf overdrive maximum ratings rating symbol value unit collector-emitter voltage vceo 18 vdc collector-base voltage vcbo 36 vdc emitter-base voltage vebq 40 vdc collector-current ? continuous iq 20 adc total device dissipation ?>tc = 25c(1> pq 2so warn derate above 2sc 1 .43 w/c storage temperature range tslg -65 to +150 "c thermal characteristics characteristic symbol m? unit thermal retistence, junction to case (2) rfljc 0.7 c/w (1) these devices are designed for rf operation. the total device dissipation rating applies only when the devices are operated as rf amplifiers. (2) thermal resistance it determined under specified rf operating conditions by infrared measurement techniques mrf492 MRF492A 70 w 60 mhz rf power transistor npn silicon (-? ? .? ? ._ u . -\ks < m ^--. t k n vr ill 1 j ? 1 r? ' ' ? i-j i c i ? 1 t 1 1 "" /-"^ u. i, dmk3ionmg am totfuhong per / tcii? . ansi yi4.!, ik ( ^ t^ j j cqnt1wluhg d**fftb?r inch /t} jjjl \ ti>ti_xr 5 stvu pw evnrtr base -1 coufctoh j mrf492 -u i-sv -* 111 m bm "? ?? --rfr rt . r? i 1 i u^ i '-*r^v ?i-^p r of? \^ -*j i styu1; 1 nm.&inta c 1use ft imna i *couktw j unrein y t ? i -r- ^t -js- x m) u> ui mi ?h "? 11? 1? t't "? 1 - ?? oh im ua jj ^r-sr i "^ ^ r - ms dmbihonhcaw nuwrlim.im cxmtkumgom ?ffiitisu -s. * ~h~ * an 1 wj w ?v "4 ?* jt l! t tqlemncwg mw*:?cm, ?m"? ?h ub kri s n ?w t jb-llbl - . ? nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mrf492, MRF492A electrical characteristics |tc = 25c unless otherwise noted) characteristic symbol mln typ m?x unit off characteristics collector-eminer breakdown voltage (ic= loomadc, ib = 0) collector-emitter breakdown voltage (ic * 60 madc, vbe = 0) emitter-base breakdown voltage ie =10 madc. lc = 0) collector cutoff current (vce=13,6vdc.vbe = oi vibriceo vibrices vibhiebo ices 18 36 4.0 ? ? ? ? ? ? ? ? 20 vdc vdc vdc madc on characteristics dc current gain (lc * s.o adc, vce = s.o vdc) kfe 10 ? dynamic characteristics output capacitance (vcb='5vdc. ie-o. f* 1.0 mhj) cob ? 275 1so 450 ? pf functional tests common-emitter amplifier power gain (vcc =12.8 vdc, pout = 70 w, f * 50 mhi) collector efficiency (vcc = 1 2.5 vdc, pou, = 70 w. f = 50 mhz) gpe 1 11 50 13 ? ? ? db % figure 1 - 50 mhi test circuit rfc2 -< * 12.5 vdc rf input > cl, c8 - 9.0-180 pf, arco 463 c2. c3. c4 ? 80-^80 pf, arco 466 c5 ? 1000 pf, 360 v, unelco co ? 10)if, 2svdc c7 ? 0.01 t.f. ceramic rfc1 ? 10 /ih molded choke |
